Q. 16 The variation of drain current with gate-to-source voltage (ID – VGS
characteristic) of a MOSFET is shown in figure. The MOSFET is
(A) an n-channel depletion mode device
(B) an n-channel enhancement mode device
(C) an p-channel depletion mode device
(D) an p-channel enhancement mode device
Answer: (C)
Explanation:
