Q.46 Consider avalanche breakdown in a silicon 
junction. The n-region is uniformly doped with a donor density 
Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical filed
Assume 
to be independent of . If the built-in voltage of the junction is much smaller than the breakdown voltage,
the relationship between and is given by
Answer: (C)
Explanation:
