Gate EC-2015 – 3 Question Paper With Solutions

Q. 46 The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter Gate EC-2015 - 3 Question Paper With Solutionsis_______.

Answer: (0.022)

Explanation:

Gate EC-2015 - 3 Question Paper With Solutions

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