Q. 31 For a silicon diode with long P and N regions, the accepter and donor impurity concentrations are
respectively. The lifetimes of electrons in P region and holes in N region are both 100 μs . The electron and hole diffusion coefficients are 
respectively. Assume kT/q = 26 mV, the intrinsic carrier concentration is
C. When a forward voltage of 208 mV is applied across the diode, the hole current density 
injected from P region to N regions is ______.
Answer: 28.6
Explanation:
