Q. 36 When a silicon diode having a doping concentration of 
-side and
on n-side is reverse biased, the total depletion width is found to be 
. Given that the permittivity of silicon is 1.04#10-12 F/cm,
the depletion width on the p-side and the maximum electric field in the depletion
region, respectively, are
Answer: B
Explanation:
