Q. 8 A silicon bar is doped with donor impurities 
. Given the intrinsic carrier concentration of silicon at 
. Assuming complete impurity ionization, the equilibrium election and hole concentrations are
Answer: D
Explanation:
Q. 8 A silicon bar is doped with donor impurities . Given the intrinsic carrier concentration of silicon at . Assuming complete impurity ionization, the equilibrium election and hole concentrations are
Answer: D
Explanation:
