Q. 7 Thin gate oxide in a CMOS process in preferably grown using
(A) wet oxidation
(B) dry oxidation
(C) epitaxial oxidation
(D) ion implantation
Answer: B
Explanation:
Q. 7 Thin gate oxide in a CMOS process in preferably grown using
(A) wet oxidation
(B) dry oxidation
(C) epitaxial oxidation
(D) ion implantation
Answer: B
Explanation: