Q. 51 Silicon is doped with boron to a concentration of 
. Assume the intrinsic carrier concentration of silicon to be 
and the value of kT/q to be 25 mV at 300 K. Compared to undopped silicon, the fermi level of doped silicon
(A) goes down by 0.31 eV
(B) goes up by 0.13 eV
(C) goes down by 0.427 eV
(D) goes up by 0.427 eV
Answer: C
Explanation:
